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TN2010T

ETC
Part Number TN2010T
Manufacturer ETC
Description N-Channel Enhancement-Mode MOSFET Transistor
Published Oct 23, 2007
Detailed Description www.DataSheet4U.com TN2010T N-Channel Enhancement-Mode MOSFET Transistor Product Summary V(BR)DSS Min (V) 200 rDS(on) ...
Datasheet PDF File TN2010T PDF File

TN2010T
TN2010T

Overview
www.
DataSheet4U.
com TN2010T N-Channel Enhancement-Mode MOSFET Transistor Product Summary V(BR)DSS Min (V) 200 rDS(on) Max (W) 11 VGS(th) (V) 0.
8 to 3.
0 ID (A) 0.
12 Features D D D D D Low On-Resistance: 9.
5 W Secondary Breakdown Free: 220 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability Benefits D D D D D Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Voltage No High-Temperature “Run-Away” Applications D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.
D Telephone Mute Switches, Ringer Circuits D Power Supply, Converters D Motor Control TO-236 (SOT-23) G 1 3 D S 2 Top View TN2010T (R1)* *Marking Code for TO-236 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Ran...


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