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TN2010T

Siliconix
Part Number TN2010T
Manufacturer Siliconix
Description N-Channel Enhancement-Mode MOSFET Transistor
Published May 9, 2016
Detailed Description TN2010T N-Channel Enhancement-Mode MOSFET Transistor Product Summary V(BR)DSS Min (V) 200 rDS(on) Max (W) 11 VGS(th)...
Datasheet PDF File TN2010T PDF File

TN2010T
TN2010T

Overview
TN2010T N-Channel Enhancement-Mode MOSFET Transistor Product Summary V(BR)DSS Min (V) 200 rDS(on) Max (W) 11 VGS(th) (V) 0.
8 to 3.
0 ID (A) 0.
12 Features D Low On-Resistance: 9.
5 W D Secondary Breakdown Free: 220 V D Low Power/Voltage Driven D Low Input and Output Leakage D Excellent Thermal Stability Benefits D Low Offset Voltage D Full-Voltage Operation D Easily Driven Without Buffer D Low Error Voltage D No High-Temperature “Run-Away” Applications D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.
D Telephone Mute Switches, Ringer Circuits D Power Supply, Converters D Motor Control TO-236 (SOT-23) G1 S2 3D Top View TN2010T (R1)* *Marking Code for TO-236 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta TA= 25_C TA= 70_C Power Dissipation Maximum Junction-to-Ambient TA= 25_C TA= 70_C Opera...


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