Filtronic
Solid State
FEATURES
LP1500SOT223
Low Noise, High Linearity Packaged PHEMT
• • • • •
+27 dBm Typical Power at 1800 MHz 15 dB Typical Power Gain at 1800 MHz 1.
0 dB Typical Noise Figure +42 dBm Typical Intercept Point Color-coded by IDSS range
GATE
SOURCE
SOURCE
DRAIN
(TOP VIEW)
DESCRIPTION AND APPLICATIONS
The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility
Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.
25 µm by 1500 µm
Schottky barrier gate.
The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.
The epitaxial structure and processing have...