DatasheetsPDF.com

LP1500SOT2232

Filtronic Compound Semiconductors
Part Number LP1500SOT2232
Manufacturer Filtronic Compound Semiconductors
Description Low Noise/ High Linearity Packaged PHEMT
Published Mar 22, 2005
Detailed Description Filtronic Solid State FEATURES LP1500SOT223 Low Noise, High Linearity Packaged PHEMT • • • • • +27 dBm Typical Power ...
Datasheet PDF File LP1500SOT2232 PDF File

LP1500SOT2232
LP1500SOT2232

Overview
Filtronic Solid State FEATURES LP1500SOT223 Low Noise, High Linearity Packaged PHEMT • • • • • +27 dBm Typical Power at 1800 MHz 15 dB Typical Power Gain at 1800 MHz 1.
0 dB Typical Noise Figure +42 dBm Typical Intercept Point Color-coded by IDSS range GATE SOURCE SOURCE DRAIN (TOP VIEW) DESCRIPTION AND APPLICATIONS The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.
25 µm by 1500 µm Schottky barrier gate.
The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.
The epitaxial structure and processing have...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)