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LP1500SOT223

Filtronic Compound Semiconductors
Part Number LP1500SOT223
Manufacturer Filtronic Compound Semiconductors
Description Low Noise/ High Linearity Packaged PHEMT
Published Mar 22, 2005
Detailed Description Filtronic Solid State FEATURES LP1500SOT223 Low Noise, High Linearity Packaged PHEMT • • • • • +27 dBm Typical Power ...
Datasheet PDF File LP1500SOT223 PDF File

LP1500SOT223
LP1500SOT223

Overview
Filtronic Solid State FEATURES LP1500SOT223 Low Noise, High Linearity Packaged PHEMT • • • • • +27 dBm Typical Power at 1800 MHz 15 dB Typical Power Gain at 1800 MHz 1.
0 dB Typical Noise Figure +42 dBm Typical Intercept Point Color-coded by IDSS range GATE SOURCE SOURCE DRAIN (TOP VIEW) DESCRIPTION AND APPLICATIONS The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.
25 µm by 1500 µm Schottky barrier gate.
The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.
The epitaxial structure and processing have been optimized for reliable high-power applications.
The LP1500 also features Si3N4 passivation and is available in a die form or in a flanged ceramic package (P100) for high-power applications, or in the SOT-89 plastic package.
Typical applications include PCS/Cellular low-voltage high-efficiency output amplifiers, and general purpose power amplifiers.
The LP 1500 may be procured in a variety of grades, depending upon specific user requirements.
Standard lot screening is patterned after MIL-STD-19500, JANC grade.
PERFORMANCE SPECIFICATIONS (TA = 25°C) SYMBOLS IDSS P1dB G1dB NF IP3 IMAX GM VP IGSO BVGS BVGD LP1500-SOT223-1 BLUE LP1500-SOT223-2 GREEN LP1500-SOT223-3 RED Output Power at 1dB Gain Compression f = 1800 Mhz VDS = 3.
3V, IDS = 33% IDSS Power Gain at 1dB Gain Compression f = 1800 MHz VDS = 3.
3V, IDS = 33% IDSS Noise Figure VDS = 3.
3V, IDS = 33% IDSS, f = 1.
8 GHz Output Intercept Point VDS = 3.
3V, IDS = 33% IDSS, f = 1.
8 GHz Maximum Drain-Source Current VDS = 2V VGS = +1V Transconductance VDS = 2V VGS = 0V Pinch-Off Voltage VDS = 2V IDS = 5mA Gate-Source Leakage Current VGS = -3V Gate-Source Breakdown Voltage IGS = 8mA Gate-Drain Breakdown Voltage IGD = 8mA PARAMETERS Saturated Drain-Source Current VDS = 2V VGS = 0V MIN 375 451 527 25.
0 13.
5 TYP 420 490 560 27.
0 15.
0 1.
0...


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