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2SJ280 L , 2SJ280 S
Silicon P Channel MOS FET
Application
LDPAK
High speed power switching
4 4
Features
• • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching
regulator, DC – DC converter • Avalanche Ratings
1 1 2, 4 2 3 2 3
1
1.
Gate 2.
Drain 3.
Source 4.
Drain
3
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body–drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR IAP*** EAR*** Pch** T...