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Ordering number:EN2018A
NPN Epitaxial Planar Silicon
Transistor
2SC3807
High hFE, Low-Frequency General-Purpose Amplifier Applications
Applications
· Low frequency general-purpose amplifiers, drivers.
Package Dimensions
unit:mm 2043A
[2SC3807]
Features
· Large current capacity (IC=2A).
· Adoption of MBIT process.
· High DC current gain (hFE=800 to 3200).
· Low collector-to-emitter saturation voltage (VCE(sat)≤0.
5V).
· High VEBO (VEBO≥15V).
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature S...