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C3803

Toshiba
Part Number C3803
Manufacturer Toshiba
Description Silicon NPN Transistor
Published Jun 8, 2015
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3803 High Frequency Amplifier Applications Video Amplifie...
Datasheet PDF File C3803 PDF File

C3803
C3803

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3803 High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications 2SC3803 Unit: mm • High transition frequency: fT = 200 MHz (typ.
) • Low collector output capacitance: Cob = 3.
5 pF (typ.
) • Complementary to 2SA1483 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Continuous base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC PC (Note 1) Tj Tstg 60 45 5 200 50 500 1000 150 −55 to 150 V V V mA mA mW °C °C PW-MINI JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.
05 g (typ.
) Note 1: Mounted on a ceramic substrate (250 mm2 × 0.
8 t) Note 2: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2009-12-21 Electrical Characteristics (Ta = 25°C) 2SC3803 Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Input impedance (real part) Collector output capacitance Symbol Test Condition Min Typ.
Max Unit ICBO VCB = 45 V, IE = 0 ― ― 0.
1 μA IEBO VEB = 5 V, IC = 0 ― ― 0.
1 μA hFE (1) (Note 3) VCE = 1 V, IC = 10 mA 40 ― 240 hFE (2) VCE = 3 V, IC = 200 mA 20 ― ― VCE (sat) IC = 100 mA, IB = 10 mA ― ― 0.
3 V VBE (sat) IC = 1...


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