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C3811

Panasonic
Part Number C3811
Manufacturer Panasonic
Description Silicon NPN Transistor
Published Mar 1, 2021
Detailed Description Transistors 2SC3811 Silicon NPN epitaxial planar type For high-speed switching ■ Features • Low collector-emitter satur...
Datasheet PDF File C3811 PDF File

C3811
C3811


Overview
Transistors 2SC3811 Silicon NPN epitaxial planar type For high-speed switching ■ Features • Low collector-emitter saturation voltage VCE(sat) 5.
0±0.
2 Unit: mm 4.
0±0.
2 5.
1±0.
2 0.
7±0.
2 12.
9±0.
5 0.
7±0.
1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage (Emitter open) VCBO 40 V 0.
45+–00.
.
115 0.
45+–00.
.
115 e Collector-emitter voltage (E-B short) VCES 40 V c type) Emitter-base voltage (Collector open) VEBO 5 V n d ge.
ed Collector current IC 100 mA 2.
3±0.
2 le sta ntinu Peak collector current ICP 300 mA a e cyc isco Collector power dissipation PC 400 mW life d, d Junction temperature Tj 150 °C n u duct type Storage temperature Tstg −55 to +150 °C 2.
5+–00.
.
26 2.
5+–00.
.
26 1 23 1: Emitter 2: Base 3: Collector TO-92-B1 Package inte ntins followlianngefdoudrisPcroontinued ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions Min c d inc e typ Collector-base cutoff current (Emitter open) ICBO VCB = 40 V, IE = 0 tinue anc Emitter-base cutoff current (Collector open) IEBO VEB = 4 V, IC = 0 M is con inten Forward current transfer ratio * hFE VCE = 1 V, IC = 10 mA 60 /Dis ma Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 1 mA D ance type, Base-emitter saturation voltage VBE(sat) IC = 10 mA, IB = 1 mA ten ce Transition frequency fT VCB = 10 V, IE = −10 mA, f = 200 MHz ain nan Collector output capacitance M inte (Common base, input open circuited) Cob VCB = 10 V, IE = 0, f = 1 MHz d ma Turn-on time ton Refer to the switching time measurement circuit (plane Turn-off time toff Typ Max 0.
1 0.
1 200 0.
17 0.
25 1 450 2 6 17 17 Unit µA µA  V V MHz pF ns ns Storage time tstg 10 ns Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*: Rank classification Rank Q R hFE 60 to 120 90 to 200 Publication date: February 2003 SJC00137BED 1 2SC3811 Collect...


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