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PD20015-E PD20015S-E
RF power
transistor - LdmoST family
Preliminary Data
Features
■ ■ ■ ■ ■ ■
Excellent thermal stability Common source configuration POUT = 15 W with 11 dB gain @ 2 GHz / 13.
6 V Plastic package ESD protection In compliance with the 2002/95/EC european directive
PowerSO-10RF (formed lead)
Description
The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power
transistor.
It is designed for high gain, broadband commercial and industrial applications.
It operates at 13.
6 V in common source mode at frequencies of up to 1 GHz.
PD20015-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology moun...