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PD20015-E

ST Microelectronics
Part Number PD20015-E
Manufacturer ST Microelectronics
Description Transistors
Published Jan 13, 2008
Detailed Description www.DataSheet4U.com PD20015-E PD20015S-E RF power transistor - LdmoST family Preliminary Data Features ■ ■ ■ ■ ■ ■ Ex...
Datasheet PDF File PD20015-E PDF File

PD20015-E
PD20015-E

Overview
www.
DataSheet4U.
com PD20015-E PD20015S-E RF power transistor - LdmoST family Preliminary Data Features ■ ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 15 W with 11 dB gain @ 2 GHz / 13.
6 V Plastic package ESD protection In compliance with the 2002/95/EC european directive PowerSO-10RF (formed lead) Description The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.
It is designed for high gain, broadband commercial and industrial applications.
It operates at 13.
6 V in common source mode at frequencies of up to 1 GHz.
PD20015-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF.
PD20015-E’s superior linearity performance makes it an ideal solution for mobile radio applications.
The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package.
It has be...


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