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PD20015C

ST Microelectronics
Part Number PD20015C
Manufacturer ST Microelectronics
Description Transistors
Published Jan 13, 2008
Detailed Description www.DataSheet4U.com PD20015C RF power transistor - LdmoST family Preliminary Data Features ■ ■ ■ ■ ■ ■ Excellent ther...
Datasheet PDF File PD20015C PDF File

PD20015C
PD20015C

Overview
www.
DataSheet4U.
com PD20015C RF power transistor - LdmoST family Preliminary Data Features ■ ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 15 W with 11 dB gain @ 2 GHz / 13.
6 V BeO free package ESD protection In compliance with the 2002/95/EC european directive M243 Epoxy sealed Description The PD20015C is a common source N-channel, enhancement-mode lateral FieldEffect RF power transistor.
It is designed for high gain, broadband commercial and industrial applications.
It operates at 13.
6 V in common source mode at frequencies of up to 2 GHz.
PD20015C boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology.
PD20015C’s superior linearity performance makes it an ideal solution for mobile application.
2 1.
Drain 2.
Gate 3.
Source Figure 1.
Pin connection 1 3 Table 1.
Device summary Order code PD20015C Package M243 Packing Box November 2007 Rev 1 1/9 www.
st.
com 9 This is preliminary information on a new product now in devel...


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