UTC 9014
NPN EPITAXIAL SILICON
TRANSISTOR
PRE-AMPLIFIER, LOW LEVEL & LOW NOISE
FEATURES
*High total power dissipation.
(450mW) *Excellent hFE linearity.
*Complementary to UTC 9015
1
TO-92
1: EMITTER
2: BASE
3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction Temperature Storage Temperature
SYMBOL
VCBO VCEO VEBO Ic Pc Tj TSTG
RATING
50 45 5 100 450 150 -55 ~ +150
UNIT
V V V mA mW °C °C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-base breakdown voltage Collector-emitter...