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UTC9015

UTC
Part Number UTC9015
Manufacturer UTC
Description PNP EPITAXIAL SILICON TRANSISTOR
Published Jun 1, 2016
Detailed Description UTC 9015 PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation...
Datasheet PDF File UTC9015 PDF File

UTC9015
UTC9015


Overview
UTC 9015 PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation.
(450mW) *Excellent hFE linearity.
*Complementary to UTC 9014 1 TO-92 1: EMITTER ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER SYMBOL RATING Collector-base voltage VCBO -50 Collector-emitter voltage VCEO -45 Emitter-base voltage VEBO -5 Collector current Ic -100 Collector dissipation Pc 450 Junction Temperature Tj 150 Storage Temperature TSTG -55 ~ +150 2: BASE 3: COLLECTOR UNIT V V V mA mW °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN Collector-base breakdown voltage BVCBO Ic=-100µA, IE=0 -50 Collector-emitter breakdown voltage BVCEO Ic=-1mA, IB=0 -45 Emitter-base breakdown voltage BVEBO IE=-100µA, Ic=0 -5 Collector cutoff current ICBO VCB=-50V, IE=0 Emitter cutoff current IEBO VEB=-5V, IC=0 DC current gain hFE VCE=-5V, Ic=-1...



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