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2SC2500
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT Process)
2SC2500
Strobe Flash Applications Medium-Power Amplifier Applications
Unit: mm
• High DC current gain and excellent hFE linearity
: hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.
5 A)
: hFE (2) = 70 (min), 200 (typ.
), (VCE = 1 V, IC = 2 A)
• Low saturation voltage: VCE (sat) = 0.
5 V (max) (IC = 2 A, IB = 50 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC
Collector current
Pulsed
(Note 1)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO VCES VCEO VEBO...