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C2510

Toshiba
Part Number C2510
Manufacturer Toshiba
Description 2SC2510
Published Jun 12, 2015
Detailed Description TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (...
Datasheet PDF File C2510 PDF File

C2510
C2510

Overview
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) l Specified 28V, 28MHz Characteristics l Output Power : Po = 150WPEP (Min.
) l Power Gain : Gp = 12.
2dB (Min.
) l Collector Efficiency : ηC = 35% (Min.
) l Intermodulation Distortion: IMD = −30dB (Max.
) Unit in mm MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCES VCEO VEBO IC PC Tj Tstg RATING 60 60 35 4 20 250 175 −65~175 UNIT V V V V A W °C °C JEDEC EIAJ TOSHIBA Weight: 5.
2g — — 2−13B1A 000707EAA1 · TOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stres...


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