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C2500

Toshiba
Part Number C2500
Manufacturer Toshiba
Description 2SC2500
Published Feb 11, 2008
Detailed Description www.DataSheet.co.kr 2SC2500 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2500 Strobe Flash Applicatio...
Datasheet PDF File C2500 PDF File

C2500
C2500

Overview
www.
DataSheet.
co.
kr 2SC2500 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2500 Strobe Flash Applications Medium-Power Amplifier Applications Unit: mm • High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.
5 A) : hFE (2) = 70 (min), 200 (typ.
), (VCE = 1 V, IC = 2 A) • Low saturation voltage: VCE (sat) = 0.
5 V (max) (IC = 2 A, IB = 50 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Pulsed (Note 1) Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg 30 30 10 6 2 5 0.
5 900 150 −55 to 150 V V V A A mW °C °C JEDEC TO-92MOD JEITA ― TOSHIBA 2-5J1A Weight: 0.
36 g (typ.
) Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) Note 2: Using continuously under heavy loads (e.
g.
the application of high temp...


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