TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type
SSM3K15F
SSM3K15F
High Speed Switching Applications Analog Switch Applications
• Small package • Low on resistance
: Ron = 4.
0 Ω (max) (@VGS = 4 V) : Ron = 7.
0 Ω (max) (@VGS = 2.
5 V)
Unit: mm
+0.
5 2.
5-0.
3
+0.
25 1.
5-0.
15
+0.
1 0.
4-0.
05
1
2
3
2.
9±0.
2 1.
9 0.
95 0.
95
0.
3 +0.
1 0.
16-0.
06
Absolute Maximum Ratings (Ta = 25°C)
+0.
2 1.
1-0.
1
Characteristics
Symbol
Rating
Unit
0~0.
1
Drain-source voltage
VDS
30
V
Gate-source voltage
Drain current
DC Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature
VGSS ID IDP PD Tch Tstg
±20
V
100 mA
200
200
mW
150
°C
−55 to 150
°C
S-MINI JEDEC ...