Power
Transistors
2SB967
Silicon
PNP epitaxial planar type
Unit: mm
For low-frequency power amplification
7.
3± 0.
1 1.
8± 0.
1
6.
5± 0.
1 5.
3± 0.
1 4.
35± 0.
1
2.
3± 0.
1 0.
5± 0.
1
2.
5± 0.
1
0.
8max
q q q
Possible to solder the radiation fin directly to printed cicuit board Low collector to emitter saturation voltage VCE(sat) Large collector current IC
0.
93±0.
1
1.
0± 0.
1 0.
1± 0.
05 0.
5± 0.
1
0.
75± 0.
1 2.
3± 0.
1 4.
6± 0.
1
s Absolute Maximum Ratings
Parameter Collector to base voltage www.
DataSheet4U.
com Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC=25°C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP...