DatasheetsPDF.com

2SB0930

Part Number	2SB0930
Manufacturer	Panasonic Semiconductor
Description	Power Transistors
Published	Jul 7, 2011
Detailed Description	Power Transistors 2SB0930 (2SB930), 2SB0930A (2SB930A) www.DataSheet4U.net Silicon PNP epitaxial planar type For power...
Datasheet	2SB0930 PDF File

Overview

Power Transistors 2SB0930 (2SB930), 2SB0930A (2SB930A) www.
DataSheet4U.
net Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1253, 2SD1253A ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc.
of small electronic equipment.
10.
0±0.
3 1.
5±0.
1 Unit: mm 8.
5±0.
2 6.
0±0.
2 3.
4±0.
3 1.
0±0.
1 4.
4±0.
5 Parameter Collector-base voltage (Emitter open) 2SB0930 2SB0930A Symbol VCBO VCEO VEBO IC ICP PC Ta = 25°C Tj Tstg Rating −60 −80 −60 −80 −5 −4 −8 40 1.
3 150 −55 to +150 Unit V 1 2 2.
0±0.
5 ■ Absolute Maximum Ratings TC = 25°C Collector-emitter voltage 2SB0930 (Base open) 2SB0930A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation V (6.
5) V A A W °C °C 1 : Base 2 : Collector 3 : Emitter N-G1 Package Note) Self-supported type package is also prepared.
Junction temperature Storage temperature ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-emitter cutoff current (E-B short) Collector-emitter cutoff current (Base open) 2SB0930 2SB0930A 2SB0930 2SB0930A 2SB0930 2SB0930A IEBO hFE1 * Symbol VCEO ICES ICEO Conditions IC = −30 mA, IB = 0 VCE = −60 V, VBE = 0 VCE = −80 V, VBE = 0 VCE = −30 V, IB = 0 VCE = −60 V, IB = 0 VEB = −5 V, IC = 0 VCE = −4 V, IC = −1 A VCE = −4 V, IC = −3 A VCE = −4 V, IC = −3 A IC = −4 A, IB = −0.
4 A VCE = −10 V, IC = − 0.
5 A, f = 10 MHz IC = −4 A, IB1 = − 0.
4 A, IB2 = 0.
4 A VCC = −50 V Min −60 −80 Typ Max (7.
6) Unit V −400 −400 −700 −700 −1 70 15 −2.
0 −1.
5 20 0.
2 0.
5 0.
2 250 µA µA mA  V V MHz µs µs µs Emitter-base cutoff current (Collector open) Forward current transfer ratio hFE2 Base-emitter voltage Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VBE VCE(sat) fT ton tstg tf...

Similar Datasheet

2SB0928 Power Transistors - Panasonic Semiconductor
2SB0928A Power Transistors - Panasonic Semiconductor
2SB0929 Power Transistors - Panasonic Semiconductor
2SB0929A Power Transistors - Panasonic Semiconductor
2SB0930 Power Transistors - Panasonic Semiconductor
2SB0930A Power Transistors - Panasonic Semiconductor
2SB0931 Power Transistors - Panasonic Semiconductor
2SB0932 Power Transistors - Panasonic Semiconductor
2SB0933 Power Transistors - Panasonic Semiconductor
2SB0934 Power Transistors - Panasonic Semiconductor

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)