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2SB0932

Panasonic Semiconductor
Part Number 2SB0932
Manufacturer Panasonic Semiconductor
Description Power Transistors
Published Jul 7, 2011
Detailed Description Power Transistors 2SB0932 (2SB932) www.DataSheet4U.net Silicon PNP epitaxial planar type For Power switching 8.5±0.2 6...
Datasheet PDF File 2SB0932 PDF File

2SB0932
2SB0932


Overview
Power Transistors 2SB0932 (2SB932) www.
DataSheet4U.
net Silicon PNP epitaxial planar type For Power switching 8.
5±0.
2 6.
0±0.
2 3.
4±0.
3 1.
0±0.
1 Unit: mm • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc.
of small electronic equipment.
10.
0±0.
3 1.
5±0.
1 ■ Features 4.
4±0.
5 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −130 −80 −7 −4 −8 35 1.
3 150 −55 to +150 Unit V (6.
5) V V A A W °C °C 1: Base 2: Collector 3: Emitter N-G1 Package Note) Self-supported type package is also prepared.
■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO IEBO hFE1 hFE2 * Base-emitter voltage Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VBE(sat) VCE(sat) fT ton tstg tf Conditions IC = −10 mA, IB = 0 VCB = −100 V, IE = 0 VEB = −5 V, IC = 0 VCE = −2 V, IC = − 0.
1 A VCE = −2 V, IC = −1 A IC = −3 A, IB = − 0.
15 A IC = −3 A, IB = − 0.
15 A VCE = −10 V, IC = − 0.
5 A, f = 10 MHz IC = −1 A, IB1 = − 0.
1 A, IB2 = 0.
1 A VCC = −50 V 30 0.
15 0.
8 0.
15 45 90 260 −1.
5 − 0.
5 V V MHz µs µs µs Min −80 −10 −50 Typ Max Unit V µA µA  Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*: Rank classification Rank hFE2 Q 90 to 180 P 130 to 260 Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2003 SJD00014BED (7.
6) (1.
5) ■ Absolute Maxi...



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