2SK3845
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (U-MOSIII)
2SK3845
Switching
Regulator, DC-DC Converter Applications and Motor Drive Applications
• • • Low drain-source ON resistance: RDS (ON) = 4.
7 mΩ (typ.
) High forward transfer admittance: |Yfs| = 88 S (typ.
) Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) Unit: mm
• Enhancement model: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) com
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 ±20 70 280 125 328 70 12.
5 150 −55 to150 Unit V V...