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2SK3811

NEC
Part Number 2SK3811
Manufacturer NEC
Description SWITCHING N-CHANNEL POWER MOSFET
Published Oct 7, 2007
Detailed Description DATA SHEET www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR 2SK3811 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The...
Datasheet PDF File 2SK3811 PDF File

2SK3811
2SK3811

Overview
DATA SHEET www.
DataSheet4U.
com MOS FIELD EFFECT TRANSISTOR 2SK3811 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3811 is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION PART NUMBER 2SK3811-ZP PACKAGE TO-263 (MP-25ZP) FEATURES • Super low on-state resistance RDS(on) = 1.
8 mΩ MAX.
(VGS = 10 V, ID = 55 A) • High Current Rating: ID(DC) = ±110 A (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 40 ±20 ±110 ±440 213 1.
5 150 −55 to +150 518 72 518 V V A A W W °C °C mJ A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Energy Note2 Note3 Note3 EAS IAR EAR Repetitive Avalanche Current Repetitive Avalanche Energy Notes 1.
PW ≤ 10 µs, Duty Cycle ≤ 1% 2.
Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH 3.
RG = 25 Ω, Tch(peak) ≤ 150°C The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country.
Please check with an NEC Electronics sales representative for availability and additional information.
Document No.
D16737EJ1V0DS00 (1st edition) Date Published June 2004 NS CP(K) Printed in Japan 2004 2SK3811 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD TEST CONDITIONS VDS = 40 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 55 A VGS = 10 V, ID = 55 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 20 V, ID = 55 A VGS = 10 V RG = 0 Ω MIN.
TYP.
MAX.
10 ±100 UNIT...


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