2SK3847
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (U−MOS III)
2SK3847
Switching
Regulator, DC/DC Converter and Motor Drive Applications
z Low drain−source ON resistance z High forward transfer admittance : RDS (ON) = 12 mΩ (typ.
) : |Yfs| = 36 S (typ.
) Unit: mm
z Low leakage current : IDSS = 100 μA (max) (VDS = 40 V) z Enhancement mode : Vth = 1.
5 to 2.
5 V com (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 40 40 ±20 32 96 30 47 32 3 150 −55~150 Unit V V V A A W mJ A...