Part Number
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WFF4N60 |
Manufacturer
|
Wisdom technologies |
Description
|
N-Channel MOSFET |
Published
|
Jun 24, 2008 |
Detailed Description
|
Wisdom Semiconductor
WFF4N60
N-Channel MOSFET
Features
■ ■
RDS(on) (Max 2.5 Ω )@VGS=10V Gate Charge (Typical 15nC) Im...
|
Datasheet
|
WFF4N60
|
Overview
Wisdom Semiconductor
WFF4N60
N-Channel MOSFET
Features
■ ■
RDS(on) (Max 2.
5 Ω )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)
Symbol
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{
2.
Drain
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www.
DataSheet4U.
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1.
Gate {
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{
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Source
General Description
This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half b...
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