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WFF4N60

Wisdom technologies
Part Number WFF4N60
Manufacturer Wisdom technologies
Description N-Channel MOSFET
Published Jun 24, 2008
Detailed Description Wisdom Semiconductor WFF4N60 N-Channel MOSFET Features ■ ■ RDS(on) (Max 2.5 Ω )@VGS=10V Gate Charge (Typical 15nC) Im...
Datasheet PDF File WFF4N60 PDF File

WFF4N60
WFF4N60

Overview
Wisdom Semiconductor WFF4N60 N-Channel MOSFET Features ■ ■ RDS(on) (Max 2.
5 Ω )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { 2.
Drain ● www.
DataSheet4U.
com ■ ■ ■ 1.
Gate { ▲ ● ● { 3.
Source General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
TO-220F 1 2 3 Absolute Maximum Ratings (* Drain current limited by junction temperature) Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Vol...


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