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WFF4N60

Part Number	WFF4N60
Manufacturer	Winsemi
Description	Silicon N-Channel MOSFET
Published	Mar 22, 2017
Detailed Description	Features � 4A,600V,RDS(on)(Max 2.5Ω)@VGS=10V � Ultra-low Gate Charge(Typical 16nC) � Fast Switching Capability � 100%Ava...
Datasheet	WFF4N60 PDF File

Overview

Features � 4A,600V,RDS(on)(Max 2.
5Ω)@VGS=10V � Ultra-low Gate Charge(Typical 16nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage(VISO=4000V AC) � Maximum Junction Temperature Range(150℃) WFF4N60 Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.
This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics.
This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast.
Absolute Maximum Ratings Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Cu...

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