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3DD13002

Part Number 3DD13002
Manufacturer TRANSYS Electronics
Description Plastic-Encapsulated Transistors
Published Jul 21, 2008
Detailed Description Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors 3DD13002 FEATURES Power dissipation PCM: TR...
Datasheet 3DD13002




Overview
Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors 3DD13002 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO-251 w.
DataSheet4U.
com 1.
25 W (Tamb=25℃) 1.
BASE 2.
COLLECTOR 3.
EMITTER Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Trans...






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