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3DD13001

GME
Part Number 3DD13001
Manufacturer GME
Description High Voltage Fast Switching NPN Power Transistor
Published Apr 17, 2018
Detailed Description Production specification High Voltage Fast Switching NPN Power Transistor 3DD13001 FEATURES  PC=350mW(Mounted on cer...
Datasheet PDF File 3DD13001 PDF File

3DD13001
3DD13001

Overview
Production specification High Voltage Fast Switching NPN Power Transistor 3DD13001 FEATURES  PC=350mW(Mounted on ceramic substrate).
Pb  High speed switching.
Lead-free  Small flat package.
APPLICATIONS  High voltage switch mode application.
ORDERING INFORMATION Type No.
Marking 3DD13001 13001 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 600 V 400 V 7V 0.
2 A 350 mW -55 to +150 ℃ C186 Rev.
A www.
gmesemi.
com 1 Production specification High Voltage Fast Switching NPN Power Transistor 3DD13001 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage V(BR)CBO V(BR)CEO V(BR)EBO...


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