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3DD13001

TRANSYS Electronics
Part Number 3DD13001
Manufacturer TRANSYS Electronics
Description Plastic-Encapsulated Transistors
Published Jul 21, 2008
Detailed Description Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors 3DD13001 FEATURES Power dissipation PCM: 1.2 ...
Datasheet PDF File 3DD13001 PDF File

3DD13001
3DD13001

Overview
Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors 3DD13001 FEATURES Power dissipation PCM: 1.
2 W (Tamb=25℃) 1.
BASE 2.
COLLECTOR 3EMITTER TRANSISTOR (NPN) TO-251 DataSheet4U.
com Collector current ICM: 0.
2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage VCE(sat) VBE(sat) VBE 1 2 3 unless otherwise specified) Test conditions MIN 600 400 7 100 200 100 10 5 0.
5 1.
2 1.
1 V V V 40 TYP MAX UNIT V V V µA µA µA Ic= 100µA , IE=0 IC= 1 mA , IB=0 IE= 100 µA, IC=0 VCB= 600 V , IE=0 VCE= 400 V , IB=0 VEB= 7 V , IC=0 ...


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