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MS2422
RF & MICROWAVE
TRANSISTORS AVIONICS APPLICATIONS
Features
com • DESIGNED
• • • • • • • • • •
FOR HIGH POWER PULSED IFF, DME, AND TACAN APPLICATIONS 350 W (typ.
) IFF 1030 – 1090 MHz 300 W (min.
) DME 1025 – 1150 MHz 290 W (typ.
) TACAN 960 – 1215 MHz 960 – 1215 MHz GOLD METALLIZATION POUT = 300W MINIMUM GP = 6.
3 dB MINIMUM INFINITE VSWR CAPABILITY @ RATED CONDITIONS EMITTER BALLASTED COMMON BASE
DESCRIPTION:
The MS2422 is a gold metallized silicon,
NPN power
transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME, and TACAN.
The MS24...