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MS2422

Advanced Power Technology
Part Number MS2422
Manufacturer Advanced Power Technology
Description RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
Published Aug 25, 2008
Detailed Description 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS2422 RF & MICROWAVE TRANS...
Datasheet PDF File MS2422 PDF File

MS2422
MS2422


Overview
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS2422 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features www.
DataSheet4U.
com • DESIGNED • • • • • • • • • • FOR HIGH POWER PULSED IFF, DME, AND TACAN APPLICATIONS 350 W (typ.
) IFF 1030 – 1090 MHz 300 W (min.
) DME 1025 – 1150 MHz 290 W (typ.
) TACAN 960 – 1215 MHz 960 – 1215 MHz GOLD METALLIZATION POUT = 300W MINIMUM GP = 6.
3 dB MINIMUM INFINITE VSWR CAPABILITY @ RATED CONDITIONS EMITTER BALLASTED COMMON BASE DESCRIPTION: The MS2422 is a gold metallized silicon, NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME, and TACAN.
The MS2422 is designed with internal input/output matching resulting in improved broadband performance and low thermal resistance.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCES VEBO IC PDISS TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 65 65 3.
5 22 875 200 -65 to +150 Unit V V V A W ºC ºC Thermal Data RTH(J-C) Junction-case Thermal Resistance 0.
20 ° C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.
ADVANCEDPOWER.
COM or contact our factory direct.
MS2422 STATIC ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) Test Conditions IC = 10 mA IC = 25 mA IE = 5.
0 mA VCE = 50 V VCE = 5 V IE = 0 mA VBE = 0 V IC = 0 mA IE = 0 mA IC = 1A Symbol www.
DataSheet4U.
com BVCBO BVCES BVEBO ICES hFE Value Min.
65 65 3.
5 --10 Typ.
----------- Max.
------25 --- Unit V V V mA mA DYNAMIC DYNAMIC Symbol POUT GP ηC Conditions Test Conditions f = 1025 - 1150 MHz f = 1025 - 1150 MHz f = 1025 - 1150 MHz PIN = 70W PIN = 70W PIN = 70W VCE = 50V VCE = 50V VCE = 50V Value Min.
300 6.
3 35 Typ.
------- Max.
------- Unit W dB % Pulse Width = 10 µ s Duty Cycle = 1% IMPEDANCE...


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