DatasheetsPDF.com

MS2421

Part Number	MS2421
Manufacturer	Advanced Power Technology
Description	RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
Published	Aug 25, 2008
Detailed Description	140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS2421 RF & MICROWAVE TRANS...
Datasheet	MS2421 PDF File

Overview

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS2421 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features www.
DataSheet4U.
com • DESIGNED • • • • • • • • • • FOR HIGH POWER PULSED IFF, DME, AND TACAN APPLICATIONS 350 W (typ.
) IFF 1030 – 1090 MHz 300 W (min.
) DME 1025 – 1150 MHz 290 W (typ.
) TACAN 960 – 1215 MHz 960 – 1215 MHz GOLD METALLIZATION POUT = 300W MINIMUM GP = 6.
3 dB MINIMUM INFINITE VSWR CAPABILITY @ RATED CONDITIONS EMITTER BALLASTED COMMON BASE DESCRIPTION: The MS2421 is a gold metallized silicon, NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME, and TACAN.
The MS2421 is designed with internal input/output matching resulting in improved broadband performance and low thermal resistance.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol PDISS VCES VCBO VEBO TJ IC T STG Power Dissipation Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Junction Temperature Device Current Storage Temperature Parameter Value 875 65 65 3.
5 200 22 -65 to +200 Unit W V V V ºC A ºC Thermal Data RTH(J-C) Junction-case Thermal Resistance 0.
20 ° C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.
ADVANCEDPOWER.
COM or contact our factory direct.
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS2421 ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) STATIC Symbol BVCBO www.
DataSheet4U.
com Test Conditions IC = 10 mA IE = 5.
0 mA VCE = 50 V VCE = 5 V IC= 500mA IE = 0 mA IC = 0 mA Value Min.
65 3.
5 --10 Typ.
--------- Max.
----25 200 Unit V V mA mA BVEBO ICES HFE DYNAMIC Symbol POUT GP ηC Conditions Test Conditions f =1025 - 1150 MHz f =1025 - 1150 MHz f =1025 - 1150 MHz PIN = 70W PIN = 70W PIN = 70W VCE =50V VCE =50V VCE =50V Value Min.
300 6.
3 35 Typ.
------- Max.
------- Unit W dB % Pulse Width ...

Similar Datasheet

MS24185M RELAYS - ETC
MS241A 0.4 DUAL DIGIT NUMERIC DISPLAYS - Micro Electronics
MS241C 0.4 DUAL DIGIT NUMERIC DISPLAYS - Micro Electronics
MS2421 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS - Advanced Power Technology
MS2422 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS - Advanced Power Technology
MS2441 NPN SILICON RF POWER TRANSISTOR - Advanced Semiconductor
MS245 DUAL DIGIT NUMERIC DISPLAYS - Micro Electronics
MS24523-xx (MS Series) Standard Lever Selection Table - ETC
MS24524-21 (MS Series) Standard Lever Selection Table - ETC
MS24524-xx (MS Series) Standard Lever Selection Table - ETC

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)