SSM3K03FV
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type
SSM3K03FV
High Speed Switching Applications Analog Switch Applications
0.
22±0.
05 1.
2±0.
05 0.
8±0.
05 0.
32±0.
05 3 2 0.
13±0.
05
Unit: mm
• •
2.
5 V gate drive
1.
2±0.
05 0.
8±0.
05
High input impedance
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range Symbol VDS VGSS ID PD (Note 1) Tch Tstg Rating 20 10 100 150 150 −55~150 Unit V V mA mW °C °C
0.
5±0.
05
0.
4
• Low gate threshold voltage: Vth = 0.
7~1.
3 V www.
DataSheet4U.
com • Optimum for high-density mounting in small packages
0.
4
1
1.
...