DatasheetsPDF.com

SSM3K03FV

Toshiba Semiconductor
Part Number SSM3K03FV
Manufacturer Toshiba Semiconductor
Description High Speed Switching Applications
Published Sep 11, 2008
Detailed Description SSM3K03FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FV High Speed Switching Applications Analog...
Datasheet PDF File SSM3K03FV PDF File

SSM3K03FV
SSM3K03FV

Overview
SSM3K03FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FV High Speed Switching Applications Analog Switch Applications 0.
22±0.
05 1.
2±0.
05 0.
8±0.
05 0.
32±0.
05 3 2 0.
13±0.
05 Unit: mm • • 2.
5 V gate drive 1.
2±0.
05 0.
8±0.
05 High input impedance Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range Symbol VDS VGSS ID PD (Note 1) Tch Tstg Rating 20 10 100 150 150 −55~150 Unit V V mA mW °C °C 0.
5±0.
05 0.
4 • Low gate threshold voltage: Vth = 0.
7~1.
3 V www.
DataSheet4U.
com • Optimum for high-density mounting in small packages 0.
4 1 1.
Gate 2.
Source 3.
Drain VESM JEDEC ― Note: JEITA ― Using continuously under heavy loads (e.
g.
the application of TOSHIBA 2-2L1B high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the Weight: 1.
5 mg (typ.
) reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board 0.
5mm 0.
45mm 0.
45mm 0.
4mm Marking 3 Equivalent Circuit 120 3 DA 1 2 1 2 1 2007-11-01 SSM3K03FV Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source on-resistance Input capacitance Reverse transfer capacitance www.
DataSheet4U.
com Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth ⎪Yfs⎪ RDS (ON) Ciss Crss Coss ton toff Test Condition VGS = 10 V, VDS = 0 ID = 100 μA, VGS = 0 VDS = 20 V, ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)