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SSM3K03TE

Toshiba Semiconductor
Part Number SSM3K03TE
Manufacturer Toshiba Semiconductor
Description High Speed Switching Applications
Published Sep 11, 2008
Detailed Description SSM3K03TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03TE High Speed Switching Applications Analog...
Datasheet PDF File SSM3K03TE PDF File

SSM3K03TE
SSM3K03TE


Overview
SSM3K03TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03TE High Speed Switching Applications Analog Switch Applications • • • 2.
5 V gate drive High input impedance Low gate threshold voltage: Vth = 0.
7~1.
3 V Unit: mm 1.
2±0.
05 0.
32±0.
05 3 0.
14±0.
05 0.
8±0.
05 0.
45 0.
45 1.
4±0.
05 0.
9±0.
1 1 2 www.
DataSheet4U.
com • Small package 0.
59±0.
05 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD Tch Tstg Rating 20 10 100 100 150 −55~150 Unit V V mA mW °C °C 1.
Gate 2.
Source 3.
Drain TESM JEDEC ― Note: JEITA ― Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in TOSHIBA 2-1B1B temperature, etc.
) may cause this product to decrease in the Weight: 0.
0022g (typ.
) reliability significantly even if the operating conditions (i.
e.
operating temperature/curr...



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