DATA SHEET
SILICON POWER
TRANSISTOR
2SC4552
NPN SILICON EPITAXIAL
TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SC4552 is a power
transistor developed for high-speed
com
PACKAGE DRAWING (UNIT: mm)
switching and features low VCE(sat) and high hFE.
This
transistor is ideal for use in drivers such as DC/DC converters and actuators.
In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost.
FEATURES
• High hFE and low VCE(sat): hFE ≥ 100 (VCE = 2 V, IC = 3 A) VCE(sat) ≤ 0.
3 V (IC = 8 A, IB = 0.
4 A) • Mold package that does not require an insulating board or insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C...