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Part Number
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K2800 |
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Manufacturer
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Hitachi Semiconductor |
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Description
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2SK2800 |
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Published
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Oct 10, 2008 |
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Detailed Description
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2SK2800
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-513G (Z) 8th. Edition Jun 1998 Features
www.DataSh...
|
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Datasheet
|
K2800
|
Overview
2SK2800
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-513G (Z) 8th.
Edition Jun 1998 Features
www.
DataSheet4U.
com
• Low on-resistance R DS(on) = 15 mΩ typ.
• High speed switching • Low drive current • 4V gate drive device can be driven from 5V source
Outline
TO–220AB
D
G
1 2 S 3
1.
Gate 2.
Drain (Flange) 3.
Source
2SK2800
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature www.
DataSheet4U.
com Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note 3 Note 3 Note 2 Note1
R...
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