FPD750
0.
5W POWER PHEMT
FEATURES:
• • • • • 27.
5 dBm Linear Output Power at 12 GHz 11.
5 dB Power Gain at 12 GHz 14.
5 dB Max Stable Gain at 12 GHz 38 dBm Output IP3 50% Power-Added Efficiency
Datasheet v3.
0
LAYOUT:
GENERAL DESCRIPTION:
The www.
DataSheet4U.
com FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility
Transistor (PHEMT), featuring a 0.
25 µm by 750 µm
Schottky barrier gate, defined by highresolution stepper-based photolithography.
The double recessed gate structure minimizes parasitics to optimize performance.
The epitaxial structure and processing have been optimized for reliable high-power applications.
The FPD750 also features Si3N4 passivation and is available in the...