AP4511GD RoHS-compliant Product Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Fast Switching Speed com D1 D1 D2 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID G2 35V 25mΩ 7A -35V 40mΩ -6.
1A ▼ PDIP-8 Package PDIP-8 S1 S2 G1 P-CH BVDSS RDS(ON) ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G1 D1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drai...

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