DatasheetsPDF.com

4511GD

Advanced Power Electronics
Part Number 4511GD
Manufacturer Advanced Power Electronics
Description AP4511GD
Published Nov 10, 2008
Detailed Description AP4511GD RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Fast Switching Speed www.DataSheet...
Datasheet PDF File 4511GD PDF File

4511GD
4511GD

Overview
AP4511GD RoHS-compliant Product Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Fast Switching Speed www.
DataSheet4U.
com D1 D1 D2 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID G2 35V 25mΩ 7A -35V 40mΩ -6.
1A ▼ PDIP-8 Package PDIP-8 S1 S2 G1 P-CH BVDSS RDS(ON) ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G1 D1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 35 ±20 7 5.
7 30 2.
0 0.
016 -55 to 150 -55 to 150 P-channel -35 ±20 -6.
1 -5 -30 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.
5 Unit ℃/W Data and specifications subject to change without notice 1 200805262 AP4511GD N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min.
35 1 - Typ.
0.
02 20 30 9 11 3 6 12 7 22 6 830 150 110 1.
2 Max.
Units 25 37 3 1 25 ±100 18 1330 1.
8 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA RDS(ON) www.
DataSheet4U.
com Static Drain-Source On-Resistance 2 VGS=10V, ID=7A VGS=4.
5V, ID=5A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (Tj=70oC) VDS=VGS, ID=250uA VDS=10V, ID=7A VDS=35V, VGS=0V VDS=28V, VGS=0V VGS=±20V ID=7A VDS=28V VGS=4.
5V VDS=18V ID=1A RG=3.
3Ω,VGS=10V RD=18Ω VGS=0V VDS=25V f=1.
0MHz f=1.
0MHz ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)