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4511GM

Advanced Power Electronics
Part Number 4511GM
Manufacturer Advanced Power Electronics
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Mar 26, 2008
Detailed Description www.DataSheet4U.com AP4511GM Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low...
Datasheet PDF File 4511GM PDF File

4511GM
4511GM

Overview
www.
DataSheet4U.
com AP4511GM Pb Free Plating Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Performance D2 D1 D2 D1 D1 D1 D2 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID G2 G2 S2 G1 S2 S1 G1 S1 35V 25mΩ 7A -35V 40mΩ -6.
1A P-CH BVDSS RDS(ON) ID SO-8 SO-8 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.
The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G1 D1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 35 ±20 7 5.
7 30 2.
0 0.
016 -55 to 150 -55 to 150 P-channel -35 ±20 -6.
1 -5 -30 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max.
62.
5 Unit ℃/W Data and specifications subject to change without notice 201122041 www.
DataSheet4U.
com AP4511GM N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min.
35 1 - Typ.
0.
02 18 29 9 11 3 6 12 7 22 6 830 150 110 1.
2 Max.
Units 25 37 3 1 25 ±100 18 1330 1.
8 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=7A VGS=4.
5V, ID=5A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=2...


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