ON Semiconductort
NPN Darlington Silicon Power
Transistor
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designed for general–purpose amplifier and low frequency switching applications.
2N6056
ON Semiconductor Preferred Device
• High DC Current Gain —
hFE = 3000 (Typ) @ IC = 4.
0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mA VCEO(sus) = 80 Vdc (Min) com • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.
0 Vdc (Max) @ IC = 4.
0 Adc = 3.
0 Vdc (Max) @ IC = 8.
0 Adc • Monolithic Construction with Built–In Base–Emitter Shunt Resistors
MAXIMUM RATINGS (1)
Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Rating Symbol VCEO VCB VEB IC IB Max 80 80
DARLINGTON 8 AMPERE SILICON POWER TRANSI...