Part Number
|
BB504C |
Manufacturer
|
Hitachi Semiconductor |
Description
|
Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier |
Published
|
Nov 19, 2008 |
Detailed Description
|
BB504C
Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
ADE-208-983D (Z) 5th. Edition Dec. 2000 Features
www.Da...
|
Datasheet
|
BB504C
|
Overview
BB504C
Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
ADE-208-983D (Z) 5th.
Edition Dec.
2000 Features
www.
DataSheet4U.
com • Build in Biasing
• • • •
Circuit; To reduce using parts cost & PC board space.
Low noise; NF = 1.
0 dB typ.
at f = 200 MHz,NF =1.
75 dB typ.
at f =900 MHz High gain; PG = 30 dB typ.
at f = 200 MHz, PG = 22 dB typ.
at f = 900 MHz Withstanding to ESD; Build in ESD absorbing diode.
Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.
Provide mini mold packages; CMPAK-4 (SOT-343mod)
Outline
CMPAK-4
2 3 1 4
1.
Source 2.
Gate1 3.
Gate2 4.
Drain
Notes:
1.
2.
Marking is “DS–”.
BB504C is individual type number of HITACHI BBFET.
BB504C
Absolute Maximum Ratin...
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