Part Number
|
HAT1127H |
Manufacturer
|
Renesas Technology |
Description
|
Silicon P-Channel Power MOSFET |
Published
|
Nov 20, 2008 |
Detailed Description
|
HAT1127H
Silicon P Channel Power MOS FET Power Switching
Features
• Capable of –4.5 V gate drive • Low drive current • H...
|
Datasheet
|
HAT1127H
|
Overview
HAT1127H
Silicon P Channel Power MOS FET Power Switching
Features
• Capable of –4.
5 V gate drive • Low drive current • High density mounting • Ultra Low on-resistance
RDS(on) = 3.
6 mΩ typ.
(at VGS = –10 V)
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
5 4 G
1 234
5 D
SSS 123
REJ03G1330-0500 Rev.
5.
00
Jan 20, 2006
1, 2, 3 4 5
Source Gate Drain
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to Case Thermal Impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1%
2.
Tc = 25°C
Symbol
VDSS VGSS
ID ID(pulse)Note1
ID...
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