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HAT1127H

Renesas Technology
Part Number HAT1127H
Manufacturer Renesas Technology
Description Silicon P-Channel Power MOSFET
Published Nov 20, 2008
Detailed Description HAT1127H Silicon P Channel Power MOS FET Power Switching Features • Capable of –4.5 V gate drive • Low drive current • H...
Datasheet PDF File HAT1127H PDF File

HAT1127H
HAT1127H

Overview
HAT1127H Silicon P Channel Power MOS FET Power Switching Features • Capable of –4.
5 V gate drive • Low drive current • High density mounting • Ultra Low on-resistance RDS(on) = 3.
6 mΩ typ.
(at VGS = –10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 4 G 1 234 5 D SSS 123 REJ03G1330-0500 Rev.
5.
00 Jan 20, 2006 1, 2, 3 4 5 Source Gate Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to Case Thermal Impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Tc = 25°C Symbol VDSS VGSS ID ID(pulse)Note1 ID...


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