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HAT1126R

Renesas Technology
Part Number HAT1126R
Manufacturer Renesas Technology
Description Silicon P-Channel Power MOSFET
Published Nov 20, 2008
Detailed Description HAT1126R, HAT1126RJ Silicon P Channel Power MOS FET High Speed Power Switching REJ03G0406-0100 Rev.1.00 Sep.10.2004 Fea...
Datasheet PDF File HAT1126R PDF File

HAT1126R
HAT1126R

Overview
HAT1126R, HAT1126RJ Silicon P Channel Power MOS FET High Speed Power Switching REJ03G0406-0100 Rev.
1.
00 Sep.
10.
2004 Features • Low on-resistance • Capable of 4.
5 V gate drive www.
DataSheet4U.
com • High density mounting • “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline SOP-8 7 8 D D 5 6 D D 5 7 6 2 G 4 G 8 3 1 2 S1 S3 4 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID ID (pulse)Note1 Ratings HAT1126R –60 ±20 –6.
0 –48 HAT1126RJ –60 ±20 –6.
0 –48 Unit V V A A A mJ W W °C °C Avalanche current IAP...


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