Part Number
|
2SK3636 |
Manufacturer
|
Guangdong Kexin Industrial |
Description
|
Silicon N-channel Power MOSFET |
Published
|
Mar 3, 2009 |
Datasheet
|
2SK3636
|
Features
Avalanche energy capacity guaranteed: EAS Gate-source surrender voltage VGSS = High-speed switching: tf = 50 ns No secondary breakdown 20 mJ 30 V guaranteed
+ 0 .2 8 .7 -0 .2
+0.1 1.27-0.1
0.1max
+0.1 0.81-0.1
+ 0 .2 5 .2 8 -0 .2
2.54
+0.2 -0.2 ...
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