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AOT462 N-Channel Enhancement Mode Field Effect
Transistor
Features
VDS (V) = 60V ID = 70A RDS(ON) 18mΩ (V GS = 10V) (VGS = 10V)
General Description
The AOT462 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge.
This device is suitable for use in UPS, high current switching applications.
Standard Product AOT462 is Pb-free (meets ROHS & Sony 259 specifications).
TO-220 D
Top View Drain Connected to Tab
G S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current Avalanche Current C Repetitive avalanche en...