LET21004
RF POWER
TRANSISTORS Ldmos Enhanced Technology in Plastic Package
TARGET DATA
Designed for GSM / EDGE / IS-97 / WCDMA applications
• EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 4 W with 11 dB gain @ 2170 MHz / 26 V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION
PowerFLAT™(5x5)
DESCRIPTION The LET21004 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power
transistor.
It is designed for high gain, broad band commercial and industrial applications.
It operates at 26 V in common source mode at frequencies up to 2.
1 GHz.
LET21004 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the innovative...